Ultrathin alternative to silicon for future electronics

There's good news in the search for the next generation of semiconductors. Researchers with the U.S. Department of Energy's Lawrence Berkeley National Laboratory and the University of California Berkeley, have successfully integrated ultra-thin layers of the semiconductor indium arsenide onto a silicon substrate to create a nanoscale transistor with excellent electronic properties. A member of the III–V family of semiconductors, indium arsenide offers several advantages as an alternative to silicon including superior electron mobility and velocity, which makes it an oustanding candidate for future low-power, high-speed electronic devices.

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