Ultrathin alternative to silicon for future electronics
Monday, November 22, 2010 - 15:30
in Physics & Chemistry
There's good news in the search for the next generation of semiconductors. Researchers have successfully used ultra-thin layers of the semiconductor indium arsenide to create a nanoscale transistor with excellent electronic properties. The technique could be applied to other III-V semiconductors for future high-speed, low-power electronic devices.